Nanoelectronics

Nanoelectronics is an essential resource for anyone looking to stay at the forefront of innovation, as it thoroughly explores cutting-edge methodologies and design principles for ultra-nanoscale technology. Modern research aims to make devices more efficient so that next-level systems will be energy-efficient, have faster operating speeds, and occupy minimal space. Traditional methods for the implementation of systems are approaching their fundamental limitations. The field of ultra-nanoscale technology is a prime choice for researchers to work and develop technologies for future systems. The advantages of the ultra-nanoscale field are low-dimensional and high-speed implementation with a focus on high levels of functional integration. Nanoelectronics: Fundamentals, Advances, and Applications comprehensively covers both introductory and advanced-level ideas and methodologies, which support future system designs in ultra-nanoscale technologies. The merits and challenges of different technological devices and systems are also discussed in depth. This book focuses on design and techniques for the next generation of intelligent systems, making it an essential resource for novices and experts exploring this innovative technology.

Preface xvii 1 Gaussian Doped SOI Junctionless FinFET: A Study of RDF Variability and Parametric Sensitivity 1 Milad Mehmood Zargar, Md. Waseem Akram, Umayia Mushtaq, Nazida Ansari, Sana Fatima and Dipak Kumar Singh 1.1 Introduction 2 1.2 FinFET Technology 4 1.3 Device Variability 6 1.4 Junctionless Transistors 10 1.5 Global TCAD Solutions 18 1.6 Simulation Methodology 21 1.7 Findings and Conversations 22 1.8 Conclusion 37 2 Nanotechnology and Applications 45 Yogesh Singh, Sunny Kumar Sharma, Purnima Hazra and Ashish Choudhary 2.1 Introduction 46 2.2 What Makes Nanotechnology Work 48\ 2.3 Preparation Method 50 2.4 Classification of Nanoparticles (NPs) 51 2.5 Applications of Nanotechnology 52 2.6 Future Prospect 59 2.7 Conclusion 60 3 Comparative Investigation of Various SRAM Cells with High Stability and Low Leakage 69 Seema Eram, Umayia Mushtaq, Nazida Ansari and Md. Waseem Akram 3.1 Introduction 70 3.2 Previous Literature 74 3.3 Leakage Reduction Techniques 76 3.4 Architecture and Functioning of Different SRAM Cell 77 3.5 SRAM Cell: Various Performance Parameters 82 3.6 The Proposed 8-T SRAM Cell 86 3.7 Results and Discussion 88 3.8 Conclusion 96 4 Application of Nanotechnology in the Development of Latent Fingerprints in the Field of Forensic Dermatoglyphics 103 Navneet Kumar and Himanshu Yadav 4.1 Introduction 104 4.2 Principle of Fingerprint Detection 105 4.3 Techniques for LFPs Analysis 106 4.4 Nanotechnology in Forensic Science 110 4.5 Discussion 119 4.6 Conclusion 120 5 Nanoelectronics: A Journey from Planar Transistor to Beyond Semiconductor 129 Kajal and Vijay Kumar Sharma 5.1 Introduction 130 5.2 Evolution of Transistor Technology 133 5.3 Advances in Transistor Design 140 5.4 Challenges in Silicon Semiconductor Technology 143 5.5 Beyond Silicon: New Materials and Technologies 148 5.6 Quantum and Molecular Electronics 151 5.7 Advanced Device Concept 152 5.8 Conclusion 155 6 EDP-Efficient Level Shifters for Super Threshold Voltage Level Shifting Applications 165 Mohammed Mahaboob Basha, Gundala Srinivasulu and V. Madhurima 6.1 Introduction 166 6.2 Types of Voltage Level Shifters 169 6.3 Performance Analysis of Start of Art Level Shifters 183 6.4 Conclusion 185 7 Applications of Nanotechnology in Nanoelectronics: Communication and Biomedical Field 191 Rubby Mahajan and Ram Prakash 7.1 Introduction 191 7.2 2D and 3D Materials 192 7.3 Multigates 194 7.4 Carbon Nanotubes 198 7.5 Graphene Nanoribbon (GNRs) 207 7.6 Tunnel Transistor 211 7.7 Junctionless Transistor 213 7.8 Concept of Single Electron Idea 217 7.9 Fundamental Principles of Spintronics 219 7.10 Future Prospects 221 8 Exploring CMOS, PTL and GDI Logic Families Based One Bit Full Adder and Subtractor Circuits in Subthreshold Region for Energy and EDP Efficient Applications 229 Mohammed Mahaboob Basha, P. Lachi Reddy and Srinivasulu Gundala 8.1 Introduction 230 8.2 GDI- and CMOS-Based Logic Circuits 232 8.3 A Variety of Approaches and Operation of the GDI-Based Full Adder Circuits 237 8.4 Subthreshold Subtractor Circuits for Energy Efficient Signal Processing Applications 249 8.5 Conclusion 261 9 TFET Fundamentals: A Gateway to Nanoscale Electronics 267 Khuraijam Nelson Singh, Ningombam Ajit Kumar, Sushmita Dandeliya, Pranab Kishore Dutta, Sonal Agrawal, Anurag Srivastava and Gaurav Kaushal 9.1 Introduction 268 9.2 Fundamentals of TFET 270 9.3 Techniques for Enhancing Performance 276 9.4 Application in Biosensor 280 9.5 Significance of TFET in Advancing Nanoscale Electronics 286 9.6 Challenges and Future Outlook 287 9.7 Conclusion 288 10 Revolutionizing Data Processing: In-Memory Computing and the Shift from Traditional Architectures 297 Nazrana Gulzar, Nazida Ansari, Umayia Mushtaq and Md Waseem Akram 10.1 Introduction 298 10.2 In-Memory Computing: Enhancing Data Processing Efficiency 302 10.3 Comparing Traditional Computing Architecture with In-Memory Computing 303 10.4 Applications of IMC 305 10.5 Types of Memory Used in IMC 307 10.6 Operations of 6T-SRAM 311 10.7 Architecture of SRAM-Based IMC 313 10.8 Comparative Analysis of IMC Architecture Using Different Memory Types 314 10.9 Design Challenges with SRAM Based IMC 325 10.10 Conclusion 329 11 The Tunnel FET: Fundamentals, Calibration, and Simulation 333 Nisha Yadav, Sunil Jadav and Gaurav Saini 11.1 Need of Tunnel FETs 334 11.2 Origin of Tunnel FETs 336 11.3 TFET Structure and Working Principle 336 11.4 Performance Parameters 340 11.5 The Development of TFET Technology 342 11.6 Calibration 349 11.7 Simulation of DG-TFET 350 11.8 Challenges for TFET 353 11.9 Conclusion 354 12 The Junctionless Device 363 Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey 12.1 Introduction 363 12.2 Qualitative Behavior of JLFETs 366 12.3 Electrical Characteristics of JLFET 374 12.4 Design Constraints for Junctionless Devices 375 12.5 Classification of JLFETs 378 12.6 Status of Model Formulation for JLFETs 384 12.7 Applications of JLFETs 385 12.8 Simulation of JLFETs 386 12.9 Conclusion 390 13 Tuning the Electronic and Spintronic Properties of BN Nanoribbons via C-Doping 395 Ajay Kumar Rakesh, Ravindra Kumar, Ankita Nemu, Neha Tyagi, Anil Govindan and Neeraj K. Jaiswal 13.1 Introduction 396 13.2 Significance of Boron Nitride Nanoribbons 399 13.3 Techniques for Synthesis of h-BN 400 13.4 Synthesis of BNNR 404 13.5 Edge Passivation of BNNR 405 13.6 Doping of BNNR 406 13.7 Computational Details 407 13.8 Results and Discussion 409 13.10 Summary 418 14 Revolutionizing Information Processing: Unveiling the Potential of Spintronics through Cutting‑Edge Electron Spin Research 429 R. Bhattacharya 14.1 Introduction 430 14.2 Understanding Spintronics: Types 430 14.3 Spintronic Materials and Devices 431 14.4 Manipulating Spin–Orbit Coupling 445 14.5 Spin Transport and Injection 447 14.6 Spintronic Memory Devices 455 14.7 Challenges and Future Directions 460 14.8 Mathematical Consideration of Spintronics 465 14.9 Conclusions 469 15 Trade-Offs in the Ultra-Nanoscale: Balancing Performance and Constraints 475 Pankaj Bhambri and Alex Khang 15.1 Introduction 476 15.2 Overview of Ultra-Nanoscale Design 477 15.3 Performance Optimization in Ultra-Nanoscale Applications 481 15.4 Nanomaterials in Ultra-Nanoscale Technologies 485 15.5 Design Techniques with Logical Schematics and Characteristics 489 15.6 Complex Limitations in the Ultra-Nanoscale Realm 490 15.7 Manufacturing Challenges and Solutions 494 15.8 Ethical Considerations in Ultra-Nanoscale Technologies 497 15.9 Real-World Case Studies and Examples 498 15.10 Conclusion 501 16 Carbon Nanotube Field Effect Transistor Technology: Fundamentals & Applications 509 Ekta Jolly and Vijay Kumar Sharma 16.1 Introduction 510 16.2 CNT Fundamentals 510 16.3 CNTFET Modeling Approaches 515 16.4 CNTFET-Based Circuits 519 16.5 Conclusion 535 References 535 Index 541