Photoluminescence Spectroscopies for Advanced Semiconductors and Quantum Structures (1版)

Photoluminescence Spectroscopies for Advanced Semiconductors and Quantum Structures presents the fundamental principles and practical applications of photoluminescence (PL) spectroscopies for advanced semiconductors and quantum structures. This comprehensive monograph provides a detailed guide to key analytical techniques, including PL, photoluminescence excitation (PLE), time-resolve PL (TRPL), and correlated optical methods like photoreflectance (PR) and contactless electro-reflectance (CER). The book covers a wide range of materials, with a strong focus on cutting-edge wide and ultra-wide bandgap semiconductors such as SiC, GaN, and Ga2O3, along with quantum structures like quantum wells, quantum dots, and light-emitting diodes (LEDs). This book is an essential resource for advanced undergraduate and graduate students, researchers, academics, and engineers in fields such as electrical engineering, semiconductor physics, condensed matter physics and optoelectronics. Readers will gain the foundational knowledge and practical insights needed to effectively use PL spectroscopies for materials characterization and device research.

Introduction SiC and IV–IV Semiconductors III–V Semiconductors, Quantum Wells and Quantum Dots II–VI Semiconductors GaN, InN and AlN Binary Semiconductors Ternary and Quaternary III-Nitride Semiconductors ZnO-Based Semiconductors GaO-Based and Other Semiconducting Oxides III-Nitride Quantum Well Structures and Light Emitting Diodes (LEDs)